sup/SUB75N05-06 vishay siliconix document number: 70292 s-05110?rev. e, 10-dec-01 www.vishay.com 2-1 n-channel 50-v (d-s), 175 c mosfet
v (br)dss (v) r ds(on) ( ) i d (a) 50 0.006 75 d g s n-channel mosfet sup75n05-06 SUB75N05-06 drain connected to tab to-220ab top view gds to-263 s g top view d
parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current t c = 25 c 75 a continuous drain current (t j = 175 c) t c = 125 c i d 70 pulsed drain current i dm 240 a avalanche current i ar 75 repetitive avalanche energy b l = 0.1 mh e ar 280 mj t c = 25 c (to-220ab and to-263) 250 c power dissipation t a = 25 c (to-263) d p d 3.7 w operating junction and storage temperature range t j , t stg ?55 to 175 c
parameter symbol limit unit pcb mount (to-263) d 40 junction-to-ambient free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 0.6 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
sup/SUB75N05-06 vishay siliconix www.vishay.com 2-2 document number: 70292 s-05110 ? rev. e, 10-dec-01 parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 50 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 50 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 50 v , v gs = 0 v, t j = 125 c 50 a dss v ds = 50 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 75 a 0.005 0.006 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 75 a, t j = 125 c 0.010 ds(on) v gs = 10 v, i d = 75 a, t j = 175 c 0.012 forward transconductance a g fs v ds = 15 v, i d = 60 a 30 s dynamic b input capacitance c iss 4500 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1100 pf reverse transfer capacitance c rss 360 total gate charge c q g 85 120 gate-source charge c q gs v ds = 25 v , v gs = 10 v, i d = 75 a 25 nc gate-drain charge c q gd ds , gs d 25 turn-on delay time c t d(on) 20 40 rise time c t r v dd = 25 v, r l = 0.33 20 100 turn-off delay time c t d(off) v dd = 25 v, r l = 0.33 i d 75 a, v gen = 10 v, r g = 2.5 50 100 ns fall time c t f 20 40 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 75 pulsed current i sm 200 a forward voltage a v sd i f = 75 a , v gs = 0 v 1.0 1.4 v reverse recovery time t rr 65 120 ns peak reverse recovery current i rm(rec) i f = 75 a, di/dt = 100 a/ s 5 8 a reverse recovery charge q rr f 0.16 0.48 c notes a. pulse test: pulse width 300 sec, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sup/SUB75N05-06 vishay siliconix document number: 70292 s-05110 ? rev. e, 10-dec-01 www.vishay.com 2-3 0 2000 4000 6000 8000 0 1020304050 0 4 8 12 16 20 0 25 50 75 100 125 150 175 0 50 100 150 200 250 0246810 0 25 50 75 100 125 150 0 20406080 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ? ) v gs ? transconductance (s) g fs 0.000 0.002 0.004 0.006 0.008 0 20 40 60 80 100 120 0 50 100 150 200 01234567 25 c ? 55 c 6 v t c = 125 c v ds = 25 v i d = 75 a v gs = 8, 9, 10 v 7 v v gs = 10 v v gs = 20 v c iss c oss c rss t c = ? 55 c 25 c 125 c 5 v 4 v i d ? drain current (a)
sup/SUB75N05-06 vishay siliconix www.vishay.com 2-4 document number: 70292 s-05110 ? rev. e, 10-dec-01 on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) ? on-resistance ( t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) r ds(on) ? ) ? source current (a) i s 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 75 a t j = 25 c t j = 150 c
safe operating area ? drain current (a) i d 500 10 limited by r ds(on) 100 t c = 25 c single pulse 1 ms 10 ms 100 ms dc 100 s normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 5 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 3 maximum avalanche and drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 0 20 40 60 80 100 0 25 50 75 100 125 150 175 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 v ds ? drain-to-source voltage (v) 1 0.1 1 10 100
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